| Vendor | Panasonic Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-126 |
| Transistor Type | PNP |
| Collector Emitter Voltage (Vceo) | 40.0 V [Max] |
| Collector Base Voltage (Vcbo) | 50.0 V [Max] |
| Emitter Base Voltage (Vebo) | 5.0 V [Max] |
| Collector Current (Ic) | 1.50 A [Max] |
| Minimum DC Current Gain (hFE) @ Ic, Vce | 80 @ 1A, 5V |
| Saturation Voltage (Vce) @ Ib, Ic | 1V @ 150mA, 1.5A |
| Saturation Voltage (Vbe) @ Ib, Ic | 1.5V @ 200mA, 2A |
| Transition Frequency | 150.0 MHz [Nom] |
| Power Dissipation | 1.200 W [Max] |
| Packaging | Bulk |
| Collector Peak Current (Icm) | 3.000 A [Nom] |
| Operating Junction Temperature | 150 ˇăC [Max] |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
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| 2SA08860Q supplier |
2SA08860Q Datasheet |
2SA08860Q specification |
2SA08860Q cross part |
| 2SA08860Q Distributor |
2SA08860Q stock |
2SA08860Q circuit diagram |
2SA08860Q PDF |
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Download PDF Datasheet