| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-3P(L) |
| Package Name | 2-21F1A |
| Transistor Type | PNP |
| Collector Emitter Voltage (Vceo) | 230.0 V [Max] |
| Collector Base Voltage (Vcbo) | 230.0 V [Max] |
| Emitter Base Voltage (Vebo) | 5.0 V [Max] |
| Collector Current (Ic) | 15.00 A [Max] |
| Minimum DC Current Gain (hFE) @ Ic, Vce | 80 @ 1A, 5V |
| Saturation Voltage (Vce) @ Ib, Ic | 3V @ 800mA, 8A |
| Transition Frequency | 30.0 MHz [Nom] |
| Power Dissipation | 150.000 W [Max] |
| Packaging | Bulk |
| Operating Junction Temperature | 150 ˇăC [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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2SA1943OQ Datasheet |
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