| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-220AB |
| FET Type | N-Channel |
| Voltage Gate to Source (Vgs) | 100.0 V [Max] |
| Continuous Drain Current (Id) | 27.00 A [Nom] |
| Rds On (Max) @ Id, Vgs | 130 mOhms @ 15A, 4V |
| Rds On (Typ) @ Id, Vgs | 90 mOhms @ 15A, 4V |
| Input Capacitance (Ciss) | 1100.0 pF @ 10.0 V |
| Gate Charge (Qg) | 50.00 nC @ 10.0 V |
| Power Dissipation | 75.000 W [Max] |
| Packaging | Tube |
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2SK2314Q Datasheet |
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Download PDF Datasheet